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KMID : 1102020210510010007
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Applied Microscopy
2021 Volume.51 No. 1 p.7 ~ p.7
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Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications
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Kim Young-Min
Lee Ji-Hye
Jeon Deok-Jin
Oh Si-Eun
Yeo Jong-Souk
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Abstract
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Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.
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KEYWORD
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Selector, Conductive filaments (CFs), Conductive atomic force microscopy (C-AFM), Electrostatic force microscopy (EFM), Kelvin probe force microscopy (KPFM)
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